Title of article :
Resonant photocurrent-spectroscopy of individual CdSe quantum dots
Author/Authors :
M. Panfilova، نويسنده , , S. Michaelis de Vasconcellos، نويسنده , , A. Pawlis، نويسنده , , K. Lischka، نويسنده , , A. Zrenner، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2009
Pages :
3
From page :
2521
To page :
2523
Abstract :
Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.
Keywords :
Photodiode , II–VI Semiconductors , Quantum confined Stark effect , CdSe/ZnSe quantum dots , Photocurrent
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2009
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1048382
Link To Document :
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