Author/Authors :
T. Fukushima، نويسنده , , Y. Hijikata، نويسنده , , H. Yaguchi، نويسنده , , S. Yoshida، نويسنده , , M. Okano، نويسنده , , M. Yoshita، نويسنده , , H. Akiyama، نويسنده , , S. Kuboya، نويسنده , , R. Katayama، نويسنده , , K. Onabe، نويسنده ,
Abstract :
We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.
