Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.