Formation of InAs quantum dots at ultrahigh growth rates

We fabricated quantum dot (QD) structures at ultrahigh growth rates. Smaller fluctuations in QD size were observed when they were grown at a rate of 1.0 ML/s under conventional growth conditions (growth temperature of 500 °C and As4 flux of 9×10−6 Torr). For QDs grown at high rates, growth interruption played an important role in the fabrication of QD structures; this was confirmed by carrying out reflection high-energy electron diffraction. Photoluminescence for QDs grown at high and low growth rates, with growth interruption and with low-temperature capping was observed at around 1250 nm at room temperature, indicating that high-quality QDs can be fabricated by employing high growth rates.