Title of article
Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
Author/Authors
Damien Bordel، نويسنده , , Mohan Rajesh، نويسنده , , Masao Nishioka، نويسنده , , Emmanuel Augendre، نويسنده , , Laurent Clavelier، نويسنده , , Denis Guimard، نويسنده , , Yasuhiko Arakawa، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2009
Pages
3
From page
2765
To page
2767
Abstract
We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI/Si) substrate by antimony-mediated metal organic chemical vapor deposition. The influence of various growth procedures for the GaAs buffer layer on the QD formation and optical quality was investigated. We obtained QDs with density above 1010 cm−2, and ground state emission in the 1.3 μm band at room temperature. These results demonstrate the promising suitability of germanium-on-insulator for the monolithic integration of QD-based and other GaAs-based photonic devices on silicon.
Keywords
Silicon photonics , Quantum dots , GeOI , GaAs , Antimony
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2009
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1048451
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