• Title of article

    Zinc oxide nanowire based field emitters

  • Author/Authors

    Sivakumar Ramanathan، نويسنده , , Yu-Chun Chen، نويسنده , , Yonhua Tzeng، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    285
  • To page
    288
  • Abstract
    We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the Fowler–Nordheim tunneling current indicate that the turn-on field is 15 V μm−1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The current–voltage characteristics of the wires are non-linear and show a rectifying behavior.
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2010
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1048538