Title of article :
Magneto-exciton in a GaN/Ga1−xAlxN quantum dot
Author/Authors :
M. Revathi، نويسنده , , ChangKyoo Yoo، نويسنده , , A. John Peter، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2010
Pages :
5
From page :
322
To page :
326
Abstract :
Magneto-exciton bound donor is investigated theoretically in a GaN/Ga1−xAlxN quantum dot within the framework of single band effective mass approximation and compared with the experimental results. Binding energies on excitons bound hydrogenic donors and the diamagnetic susceptibility are obtained as a function of dot radius and magnetic field. The valence-band anisotropy is included in our theoretical model using different hole masses in different spatial directions. Zeeman effect is calculated through the energy dependent effective mass. The dependence of donor bound exciton diamagnetic shift is found. The interband optical transition of GaN/Ga1−xAlxN dot is computed with various structural parameters in the influence of magnetic field. Our results show that (i) quantum size, the magnetic field and the interband optical transitions have a considerable influence on neutral donor exciton states, (ii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iii) the found diamagnetic shift is agreed with the other experimental investigator [Yoichi Yamada et al., 2000 [26]].
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2010
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1048545
Link To Document :
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