The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (0 0 1) and (1 1 1) orientations

The aim of this paper is to examine the effect of growth orientation and dilute nitride on the band alignment of GaInAs quantum wells on GaAs and InP substrates by means of model solid theory. The study provides a comparison of the band alignment and the strained band gap of the related GaInAsN QWs in (1 1 1) and (0 0 1) orientation. Our calculated results show that although 111-oriented GaInAsN QWs enables to reach the longer wavelengths, the conduction band offset gets shallow than that of the 001-oriented ones.