Spin-dependent tunneling through double-barrier quantum wells with random corrugation interfacial roughness

We use the transfer matrix method to study spin-dependent tunneling transmission through the NM/EuS/NM/EuS/NM junction which affected by random corrugation interfacial roughness. The temperature dependence of spin-splitting energy is calculated for EuS magnetic barrier within the mean-field approximation. We perform several calculations to study the effect of random nonplanar interfacial on transmission probability for several widths of quantum well at different temperatures. Our results show that the scattering process due to random roughness open the new conduction channels (the dip and peak resonance energies). The results may be useful in designing spintronic devices.