Transport properties of a spin-polarized quasi-two-dimensional electron gas in an InP/In1−xGaxAs/InP quantum well including temperature effects

We investigate the mobility and resistivity of a quasi-two-dimensional electron gas in an InP/In1−xGaxAs/InP quantum well at arbitrary temperatures and spin polarizations caused by an applied in-plane magnetic field. We consider the carrier density, impurity concentration and layer thickness parameters such that the ionized impurity and alloy disorder scattering are the main mechanisms. We investigate the dependence of the mobility and resistivity on the carrier density, layer thickness and magnetic field.