Design and performance considerations of novel 4H–SiC MESFET with a p-type pillar for increasing breakdown voltage

In this paper, we report a novel Super Junction Metal Semiconductor Field Effect Transistor (SJ-MESFET) where the drift region consists of a p-type pillar in order to improve breakdown voltage. We demonstrate that the depletion region in the drift region can be extended entirely by the p-type pillar leading to a uniform electric field. Therefore breakdown voltage significantly improves. Using two-dimensional and two-carrier device simulation, we have analyzed the various performance and design considerations of the SJ-MESFET. Also we have explained the reasons for improving the performance of the SJ-MESFET when compared to a Conventional Bulk MESFET (CB-MESFET). Detailed numerical simulations demonstrate that for the proposed structure due to decrease in parasitic gate-to-drain capacitor, maximum oscillation frequency increases with respect to CB-MESFET.