Title of article :
Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
Author/Authors :
N. Syrbu، نويسنده , , A. Dorogan، نويسنده , , N. Dragutan، نويسنده , , T. Vieru، نويسنده , , V. V. Ursaki، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2011
Abstract :
Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In0.3Ga0.7As/GaAs quantum wells. The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative Eb–hh1, Eb–lh1 transitions in the buffer GaAs layer are observed in the region of 1.5 eV.
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
