Title of article :
The mechanism of spontaneous doping of boron atoms into graphene
Author/Authors :
Xiaohui Deng، نويسنده , , Dengyu Zhang، نويسنده , , Mingsen Deng، نويسنده , , Xilong Qu، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
2016
To page :
2020
Abstract :
The mechanism of spontaneous doping of boron atoms into graphene is proposed from ab-initio calculations. When boron and oxygen atoms are placed beside the graphene plane, boron can substitute spontaneously carbon atom in graphene without any energy barrier. More interestingly, the mechanism of spontaneous boron doping is reversible, i.e., the boron dopant also can be removed by the similar barrier-free process. Therefore, the mechanism of doping and contra-doping in this paper should be very useful to control boron doping of graphene.
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2012
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049050
Link To Document :
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