Tunneling conductance in gapped graphene-based f-wave superconductor N/S and N/I/S junctions

Proximity effect by a f-wave superconductor on top of the graphene grown on a substrate-induced bandgap leads to a two-dimensional relativistic Dirac–Bogoliubov–de Gennes Hamiltonian with f-type pair coupling, that electrons are treated as massive Dirac particles. In this work, we aim to study the influence of two types of f-wave superconductivity on normal tunneling conductance in gapped graphene-based superconductor junctions. Using the explicit obtained forms of DBdG spinors for normal, insulator and superconductor regions in the N/S and N/I/S structures, the normal and Andreev reflection coefficients are exactly found. Finally, the behavior of normal conductance spectra in terms of bias voltage, electrostatic potentials and energy gap is investigated via the BTK formalism. Because of energy gap of graphene we find our results for N/I/S structure in the thin barrier limit with large voltage V0 applied across the barrier region.