Synthesis and photoluminescence of the branching silicon carbide nanowires

A simple and effective method is developed to controllably synthesize branching silicon carbide (SiC) nanowires by using gas flow fluctuation. The experimental results indicated that uniformly ʹYʹ shaped branching SiC nanowires were successfully synthesized. A branching mechanism of fluctuation-promoted split of catalyst particles is proposed. The synthetic approach presented here will open a new route to fabricate other nanomaterials branching structure. Photoluminescence (PL) spectrum and mapping result show that the nanowires can emit green band centered at 2.32 eV (535 nm) at room temperature, indicating potential applications in integrated nano–optoelectronic devices.