Influence of inelastic electron–phonon interaction on the noise power through a molecular junction

The effect of the inelastic electron–phonon interaction on the spin-dependent transport through a ferromagnetic/molecular structure as FM/trans-PA/FM model junction is numerically investigated. Based on a generalized Greenʹs function formalism and also the mapping technique, which transforms the many-body electron–phonon interaction problem into a multi-channels single-electron scattering problem, we found that in the presence of the electron–phonon interaction, the currents are generally reduced and the step-like structure of the current–voltage characteristic are deformed. In addition, our results indicate that the main influence of the inclusion of the electron–phonon interaction is the reduction of the conductance gap of the molecule. Furthermore, it is shown that due to inelastic interactions, the noise power increase and the significant change occurs in the Fano factor.