Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

We report in detail on the dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. This unique approach allows preparation of well-defined Si nanocrystals. Experimental techniques of time-resolved absorption and photoluminescence were used to monitor the carrier dynamics on a wide time scale from picoseconds to milliseconds for a set of samples with different parameters (nanocrystal size, hydrogen annealing). The initial fast decay (tens of picoseconds) dependent on pump intensity for excitation levels exceeding one electron–hole pair per nanocrystal can be interpreted in terms of the bimolecular recombination with constant B=(2–3)×10−10 cm3 s−1. The slow pump intensity independent decay (microseconds) can be reproduced well by a stretched-exponential function. The dependence of stretched-exponential parameters on photoluminescence photon energy and sample properties agrees well with the picture of trapped carriers.