Title of article :
Collapse of quantized Hall resistance and breakdown of dissipationless state in the integer quantum Hall effect: filling factor dependence
Author/Authors :
H. Iizuka، نويسنده , , S. Kawaji، نويسنده , , T. Okamoto، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Abstract :
Magnetic field dependence of critical current for collapse of quantized Hall resistance Icr(collapse) and critical current for breakdown of dissipationless state Icr(breakdown) have been measured near the filling factor ν=4 of Landau levels in a GaAs/AlGaAs heterostructure Hall bar. The difference Icr(breakdown)−Icr(collapse) decreases against the increase and the decrease in ν from 4 and the critical behavior disappears outside of the region 3.85<ν<4.15.
Keywords :
Quantum Hall effect , Quantized Hall resistance , Collapse of QHR , Breakdown of QHE , High magnetic field effect , Resistance standards
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures