Title of article :
Vertical quantum dots at high magnetic fields beyond the few-electron limit
Author/Authors :
D.G. Austing، نويسنده , , Y Tokura، نويسنده , , S Tarucha، نويسنده , , T.H Oosterkamp، نويسنده , , Geert J.W. Janssen، نويسنده , , M.W.S Danoesastro، نويسنده , , L.P Kouwenhoven، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
6
From page :
358
To page :
363
Abstract :
We describe phenomena that can be studied in vertical quantum dot single electron transistors. Moving from the few-electron to the several- and many-electron regimes, features in the conductance peaks initially related to spin polarization evolve with magnetic field. This allows us to first probe the spin-flip region beyond the last single-particle crossing at low field, and then the formation and stability of the spin-polarized maximum density droplet at high field. According to a simple capacitance model, charge redistribution in the dot at higher magnetic fields is accompanied by abrupt changes in the area of the droplet.
Keywords :
Quantum dots , Artificial atom , Spin-flip , Maximum density droplet
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2000
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049654
Link To Document :
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