Title of article :
Resonant tunneling and intersubband population inversion effects in asymmetric wide quantum-well structures
Author/Authors :
V.N. Murzin، نويسنده , , Yu.A. Mityagin، نويسنده , , V.A. Chuenkov، نويسنده , , A.L. Karuzskii، نويسنده , , A.V. Perestoronin، نويسنده , , L.Yu. Shchurova، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Abstract :
Theoretical estimates and the results of vertical transport and optical investigations in GaAs/AlGaAs structures show that resonant tunneling can lead efficiently to selective depopulation of the levels, resulting in a population inversion and possible stimulated emission due to intersubband transitions between the lowest states in wide-quantum-well structures.
Keywords :
Resonant tunneling , Far-infrared laser
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures