Title of article :
Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties
Author/Authors :
A Polimeni، نويسنده , , A Patanè، نويسنده , , M Henini، نويسنده , , L Eaves، نويسنده , , P.C Main، نويسنده , , G Hill، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
4
From page :
452
To page :
455
Abstract :
The optical properties of InAs/AlyGa1−yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium.
Keywords :
Quantum dots , Photoluminescence , Laser , Electroluminescence
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2000
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049763
Link To Document :
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