Title of article
Shallow acceptors in Ge/GeSi multi-quantum well heterostructures
Author/Authors
V.Ya. Aleshkin، نويسنده , , B.A. Andreev، نويسنده , , V.I. Gavrilenko، نويسنده , , I.V. Erofeeva، نويسنده , , D.V. Kozlov، نويسنده , , O.A. Kuznetsov، نويسنده , , M.D. Moldavskaya، نويسنده , , A.V Novikov، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
4
From page
608
To page
611
Abstract
The experimental spectra of residual shallow acceptors in strained quantum well Ge/GeSi heterostructures are interpreted on the basis of a new theoretical approach taking into account both confinement and strain effects. It is shown that the main lines in the spectra of undoped samples with narrow quantum wells result from the photoexcitation of the on-edge acceptors that have binding energy two times less than on-center acceptors.
Keywords
Two-dimensional shallow impurity , Strained heterostructure , Far-infrared photoconductivity
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049797
Link To Document