Author/Authors :
V.Ya. Aleshkin، نويسنده , , B.A. Andreev، نويسنده , , V.I. Gavrilenko، نويسنده , , I.V. Erofeeva، نويسنده , , D.V. Kozlov، نويسنده , , O.A. Kuznetsov، نويسنده , , M.D. Moldavskaya، نويسنده , , A.V Novikov، نويسنده ,
Abstract :
The experimental spectra of residual shallow acceptors in strained quantum well Ge/GeSi heterostructures are interpreted on the basis of a new theoretical approach taking into account both confinement and strain effects. It is shown that the main lines in the spectra of undoped samples with narrow quantum wells result from the photoexcitation of the on-edge acceptors that have binding energy two times less than on-center acceptors.
