Room temperature I–V characteristics of Si/Si1−xGex/Si interband tunneling diodes

Room temperature (RT) I–V characteristics of epitaxially grown View the MathML source–i–View the MathML source Esaki tunneling diodes are presented. A detailed investigation of the tunneling mechanism shows the importance of the incorporated Ge for an enhancement of the tunneling probability, due to a reduction of the tunneling barrier. The variation of the deposited P at the i–View the MathML source interface, to provide a δ-doping layer, results in a monotonic increase of the peak current with increasing doping concentration. The optimization of the post-growth annealing process results in a peak-to-valley current ratio (PVCR) of 4.2.