Title of article
A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density
Author/Authors
B.Y Zhang، نويسنده , , Y Ikeda، نويسنده , , Y Miyamoto، نويسنده , , K Furuya، نويسنده , , N Kikegawa، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
4
From page
851
To page
854
Abstract
A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density has been designed theoretically and fabricated experimentally. Such an emitter can supply a high current density up to View the MathML source at View the MathML source hot electron energy. A good agreement between the theoretical calculation results and experimental results has been obtained. It leads to an initially important application for studying the hot electron dynamics in the scanning hot electron microscopy (SHEM) experiment.
Keywords
Hot electron emitter , SHEM , InGaAs/AlAs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049846
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