Growth of cubic III-nitride semiconductors for electronics and optoelectronics application

III-nitrides with cubic zincblende crystal structure (c-nitrides) have been successfully obtained recently, and their physical properties have been reported. However, still, the differences in the properties from those of hexagonal wurtzite structure (h-nitrides) have not been made clear, mainly because of the poor crystalline quality of c-nitrides obtained. Many theoretical works have predicted superior physical properties of c-nitrides, which are good for their device application, compared with h-nitrides. The growth control and characterization of c-nitrides are studied, and the prospect of their application for electronics and optoelectronics is discussed.