ECR-MBE growth and patterning of GaInNAs/GaAs quantum wells for 1st order DFB lasers

We report on the growth, fabrication and characterization of 1st order DFB lasers on GaInNAs. A good quaternary GaInNAs layer quality could be achieved by using solid source molecular beam epitaxy and an electron cyclotron resonance source for nitrogen generation. GaInNAs QWʹs with nitrogen contents of about 0.5% embedded in separate confinement heterostructure lasers were pumped optically and electrically. The evanescent field of the laser mode couples strongly to the effective refractive index modulation of a DFB grating. Monomode emission peaks depending on the grating period are obtained at room temperature emitting in the View the MathML sourcem range. In addition, pulsed room-temperature operation of View the MathML sourcem GaInNAs broad area laserdiodes is achieved. This could be realized by increasing the nitrogen content of the active layer to about 1%.