Title of article
Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb
Author/Authors
E Abe، نويسنده , , F Matsukura، نويسنده , , H Yasuda، نويسنده , , Y Ohno، نويسنده , , H Ohno، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
5
From page
981
To page
985
Abstract
(Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (∼560°C) and the other is low temperature (250°C or 300°C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature.
Keywords
Molecular beam epitaxy , III–V compound , Magnetotransport , Diluted magnetic semiconductor , (Ga , GaSb , Spin , Mn)Sb
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049871
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