Theoretical and experimental considerations on the spin field effect transistor

We propose a study of the spin field effect transistor (spin-FET), as a structure for the investigation of the physics of spin polarized transport in ferromagnet/semiconductor structures and as a device for fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of this device, we develop in a first part theoretical considerations about the scaling of the spin-FET. In particular, we point out that the magnetization of the ferromagnetic source contact has to be perpendicular to ferromagnet/semiconductor interface. In a second part, we present a study of the magnetic properties of ultrathin Co layers deposited on GaAs with the aim of obtaining a perpendicular magnetization.