Title of article :
Control of material parameters and metal–insulator transition in (Ga,Mn)As
Author/Authors :
T Hayashi، نويسنده , , Y Hashimoto، نويسنده , , S Yoshida، نويسنده , , S Katsumoto، نويسنده , , Y Iye، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2001
Abstract :
We show that low-temperature annealing after epitaxial growth greatly improves the crystalline quality of a diluted-magnetic-semiconductor (Ga,Mn)As. This technique is applied to the study of unique metal–insulator transition of this material.
Keywords :
Magnetic semiconductors , Magnetoresistance , Metal–insulator transition
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
