Title of article
Control of material parameters and metal–insulator transition in (Ga,Mn)As
Author/Authors
T Hayashi، نويسنده , , Y Hashimoto، نويسنده , , S Yoshida، نويسنده , , S Katsumoto، نويسنده , , Y Iye، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
5
From page
130
To page
134
Abstract
We show that low-temperature annealing after epitaxial growth greatly improves the crystalline quality of a diluted-magnetic-semiconductor (Ga,Mn)As. This technique is applied to the study of unique metal–insulator transition of this material.
Keywords
Magnetic semiconductors , Magnetoresistance , Metal–insulator transition
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049905
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