Title of article :
Ferromagnetism and spin-dependent transport in magnetic semiconductors
Author/Authors :
J Inoue، نويسنده , , S Nonoyama، نويسنده , , H Itoh، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2001
Pages :
5
From page :
170
To page :
174
Abstract :
We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to the magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. These resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties of (Ga–Mn)As and their junctions.
Keywords :
(Ga–Mn)As , Spin-dependent transport , Double resonance , Ferromagnetic semiconductors
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2001
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049914
Link To Document :
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