Author/Authors :
J. Sadowski، نويسنده , , R. Mathieu، نويسنده , , P. Svedlindh، نويسنده , , M. Karlsteen، نويسنده , , J. Kanski and P. -O. Nilsson، نويسنده , , L. Ilver and T.G. Andersson، نويسنده , , H. ?sklund، نويسنده , , K. ?wi?tek، نويسنده , , J.Z. Domaga?a، نويسنده , , J. Bak-Misiuk، نويسنده , , D. Maude، نويسنده ,
Abstract :
We report on the successful growth of GaMnAs layers by means of migration enhanced epitaxy (MEE) at very low substrate temperatures (below 150°C). The MEE growth proceeds under stoichiometric conditions. This should lead to a lower concentration of excess arsenic defects, which compensates the p-type doping caused by Mn acceptors. According to the results of composition measurements, we succeeded in growing GaMnAs layers containing up to 10.5% Mn using the MEE technique at a substrate temperature of 150°C. Magnetization measurements indicate an onset of magnetic ordering at about View the MathML source for the 10% Mn film. This is View the MathML source higher than the Tc value of MBE-grown layers containing 7% Mn, which indicates that the MEE growth method can be applied to obtain GaMnAs films with higher Tc temperatures.
