Title of article
Fabrication and characterization of Mn doped SnO2 thin films
Author/Authors
H Kimura ، نويسنده , , T Fukumura، نويسنده , , H Koinuma، نويسنده , , M Kawasaki، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
3
From page
265
To page
267
Abstract
Epitaxial films of Mn doped SnO2 were fabricated with pulsed laser deposition method. Thin films with (101) and (100) orientations were grown on r-View the MathML source and c-(0001) sapphire substrates, respectively. Mn ions are soluble into SnO2 films up to View the MathML source. Transmission spectra show d–d transition absorption in mid-gap region due to presence of the Mn ion. Additional doping of Sb induces an n-type conduction with a carrier concentration as high as View the MathML source at View the MathML source. The resistivity rapidly increases with decreasing the temperature below View the MathML source, where considerable increase of the resistivity is observed in a magnetic field below View the MathML source.
Keywords
Epitaxial SnO2 thin films , d–d transition , Transparent conductive oxide , Diluted magnetic semiconductors
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049934
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