Title of article :
Electronic state and g-factor of Er3+ ion doped in InP
Author/Authors :
Masafumi Oohigashi، نويسنده , , Kazuko Motizuki، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2001
Pages :
3
From page :
403
To page :
405
Abstract :
The electronic state of Er3+ ion doped in InP is investigated by calculating the crystalline electric field at Er ion that substitutes an In ion in InP. The energy level of the 16-fold degenerate J states of Er3+ ion is split into two doublets and three quartets. For the obtained ground doublet, g-factor is evaluated. Results are discussed in connection with observations.
Keywords :
g-factor , Crystalline electric field , Er3+(InP)
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2001
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049963
Link To Document :
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