OMVPE growth and properties of Dy-doped III–V semiconductors

Dy doping to GaAs and InP by organometallic vapor phase epitaxy (OMVPE) has been investigated, for the first time, with two kinds of Dy sources. Secondary ion mass spectroscopy (SIMS) measurements reveal a uniform Dy distribution along the growth direction. Good controllability in GaAs of Dy concentration is achieved against a H2 flow rate through the Dy source. In View the MathML source photoluminescence (PL) measurements on Dy-doped GaAs, characteristic luminescence is successfully observed at around 1.1, 1.3, 1.7 and View the MathML source, which is assigned to the intra-4f shell transition of Dy3+ ions. The Dy-related PL intensity depends strongly on Dy concentration and growth conditions. In Dy-doped InP, weak Dy-related luminescence is also observed at around View the MathML source.