MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1−xInxAs

Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (0 0 1) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290 K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.