Isotopically engineered semiconductors – new media for the investigation of nuclear spin related effects in solids

We report on the growth and characterization of isotopically controlled silicon bulk single crystals and germanium superlattice structures in which position and concentration of nuclear spins can be controlled intentionally. The isotopically controlled semiconductor structures enable a wide variety of nuclear-spin related studies involving nuclear-magnetic-resonance and electron-spin-resonance spectroscopy.