The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

We report quantum magnetotransport experiments in novel View the MathML source-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ⪢h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.