Bend-resistance nanomagnetometry: spatially resolved magnetization studies in a ferromagnet/semiconductor hybrid structure

We have investigated the four-terminal magnetoresistance in a cross junction of a high-mobility two-dimensional electron system underneath a ferromagnetic microstructure. We find that, in contrast to the Hall resistance which gives an averaged response, the bend resistance allows one to obtain information on the local magnetic field pattern. Using this effect, we have studied the switching behavior of a two-micromagnet system.