Title of article
Control of ferromagnetism in field-effect transistor of a magnetic semiconductor
Author/Authors
F. Matsukura، نويسنده , , D. Chiba، نويسنده , , T. Omiya، نويسنده , , E. Abe، نويسنده , , T. Dietl، نويسنده , , Y. Ohno، نويسنده , , K. Ohtani، نويسنده , , H. Ohno، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
5
From page
351
To page
355
Abstract
Electric-field control of carrier-induced ferromagnetism is demonstrated for field-effect transistor structure of magnetic semiconductor (In,Mn)As. By varying the gate electric field one can control the ferromagnetic transition temperature isothermally and reversibly.
Keywords
(InMn)As , Field-effect transistor , Ferromagnetism
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050111
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