Title of article :
The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems
Author/Authors :
R.B Dunford، نويسنده , , M.R. Gates، نويسنده , , C.J. Mellor، نويسنده , , V.W. Rampton، نويسنده , , J.S. Chauhan، نويسنده , , J.R. Middleton، نويسنده , , M. Henini، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
The surface acoustic wave velocity shift and acoustoelectric effect have been studied in a double layer GaAs/AlGaAs 2D hole system. The transverse acoustoelectric field exhibited bipolar peaks centred at integer filling factor, in qualitative agreement with the single layer theoretical prediction. Anomalous bipolar peaks have been observed in the longitudinal acoustoelectric effect centred at ν=2 (at 0.6–View the MathML source) and ν=6 and 8 (at View the MathML source).
Keywords :
Acoustoelectric effect , Surface acoustic wave , Double layer hole systems , Quantum Hall effect
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures