Author/Authors :
A.K. Savchenko، نويسنده , , Y.Y. Proskuryakov، نويسنده , , S.S. Safonov، نويسنده , , S.H Roshko، نويسنده , , M. Pepper، نويسنده , , M.Y. Simmons، نويسنده , , D.A. Ritchie، نويسنده , , A.G Pogosov، نويسنده , , Z.D. Kvon، نويسنده ,
Abstract :
We study the crossover from ‘metallic’ to ‘insulating’ behaviour of the 2DEG in a vicinal Si MOSFET and 2DHG in a GaAs/GaAlAs heterostructure. It is shown that the crossover complies with a conventional Fermi-liquid approach. In the electron gas, it is caused by an impurity band at the Si/Si oxide interface. In the hole gas, the negative magnetoresistance near the crossover is well described by weak localisation, in spite of large values of interaction parameter rs∼30.
