Title of article
Evidence for a quantum Hall insulator in an InGaAs/InP heterostructure
Author/Authors
D.T.N de Lang، نويسنده , , L Ponomarenko، نويسنده , , A de Visser، نويسنده , , C Possanzini، نويسنده , , S.M. Olsthoorn، نويسنده , , A.M.M. Pruisken، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
666
To page
669
Abstract
We study the quantum critical behavior of the plateau–insulator (PI) transition in a low mobility In0.53Ga0.47As/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance ρxy which remains quantized at the plateau value h/e2 throughout the PI transition. We extract a critical exponent κ′=0.57±0.02 for the PI transition which is slightly different from the established value 0.42±0.04 as previously obtained from the plateau–plateau transitions.
Keywords
Quantum Hall effect , Plateau-insulator transition , Hall insulator , Quantum phase transition
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050189
Link To Document