Title of article :
Mapping the g factor anisotropy of InAs self-assembled quantum dots
Author/Authors :
I. Hapke-Wurst، نويسنده , , U. Zeitler، نويسنده , , R.J Haug، نويسنده , , K. Pierz، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
802
To page :
805
Abstract :
We use magneto-tunneling spectroscopy to investigate the Landé g factor of single self-assembled InAs quantum dots. With increasing ground state energy we find an increase of g. For different orientations of the magnetic field with respect to the crystallographic axes we mapped the anisotropy of the effective electron g factor. In addition to the strong anisotropy for tilting the field from the growth direction [100] into the direction View the MathML source a smaller, but measurable anisotropy is detected for changing the magnetic field direction from View the MathML source to View the MathML source.
Keywords :
Resonant tunneling , g factor , Self-assembled InAs dots
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050221
Link To Document :
بازگشت