Correlations in the local density of states probed by single electron tunneling

Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.