Title of article :
Superconductor–insulator transition in a single Josephson junction
Author/Authors :
S.G. Chung، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
3
From page :
931
To page :
933
Abstract :
Resistively shunted, single Josephson junctions are studied theoretically. The method complements the band picture and is aimed at the superconductor–insulator transition regime in the View the MathML source plane, where EJ and EC are the Josephson energy and the charging energy EC=e2/2C,C being the capacitance of the junction and Rq=h/4e2 and R are the quantum resistance and the shunt resistance. The I–V characteristic is formulated by a new theory and evaluated by the path-integral transfer matrix method. The obtained result is in accordance with the recent experiments.
Keywords :
Josephson junction , Macroscopic quantum tunneling , Dissipative quantum Kramers rate , Superconductor–insulator transition
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050253
Link To Document :
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