Title of article :
Size-selective optically excited capacitance transient spectroscopy of InAs/GaAs quantum dots
Author/Authors :
C.M.A Kapteyn، نويسنده , , W. Ehehalt، نويسنده , , R Heitz، نويسنده , , D Bimberg، نويسنده , , G.E Cirlin، نويسنده , , V.M Ustinov، نويسنده , , N.N. Ledentsov 1، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
259
To page :
262
Abstract :
We investigate the electronic properties of InAs/GaAs quantum dots using capacitance transient spectroscopy after charging by illumination. This method combines the advantages of optical spectroscopy of inter-band exciton transitions and electrical charge detection methods. The emission of holes is observed after monochromatic optical charging. It is shown that resonant absorption leads to size-selective charging of sub-ensembles of quantum dots.
Keywords :
Quantum dot , Charging , Capacitance , absorption
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050297
Link To Document :
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