Author/Authors :
Vanessa S. Cortez de Oliveira Radke، نويسنده , , A. Jbeli، نويسنده , , X. Marie، نويسنده , , M. O. Krebs، نويسنده , , R. Ferreira، نويسنده , , T. Amand، نويسنده , , P. Voisin، نويسنده , , J.-M. Gérard، نويسنده ,
Abstract :
We present measurements of electronic spin relaxation and manipulation in n-doped semiconductor quantum dots. A luminescence based nonresonant pump-probe method has been developed to determine the degree of spin polarization of electrons confined in the dots. We observe an electronic spin memory effect up to View the MathML source. The mechanism of spin polarization and relaxation are thoroughly analyzed both by continuous wave and time resolved nonresonant luminescence.
