Title of article
Photo-carrier-induced magnetism in (In,Mn)As/GaSb magnetic alloy semiconductor heterostructures
Author/Authors
H Munekata، نويسنده , , A Oiwa، نويسنده , , T Slupinski، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
5
From page
516
To page
520
Abstract
We present wavelength dependence of photo-carrier-induced magnetization for (In,Mn)As/GaSb heterostructures, and discuss the problem involved in hole transfer from GaSb to (In,Mn)As across the (In,Mn)As/GaSb heterointerface. The reduction in coercive force by the light illumination has also been shown as a new effect associated with carrier-induced magnetism.
Keywords
Molecular beam epitaxy , III–V compound semiconductors , Carrier-induced magnetism , Magnetic alloy semiconductor
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050355
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