Valence band barrier at (Ga,Mn)As/GaAs interfaces

Transport properties of (Ga,Mn)As/GaAs/p-GaAs p–i–p diodes were studied to manifest the potential barrier in the valence band at (Ga,Mn)As/GaAs junctions. The temperature dependences of the current–voltage characteristics exhibit typical thermionic emission behaviors, which gives the effective potential barrier height of 87–View the MathML source for holes injected from (Ga,Mn)As to undoped GaAs.