Rashba spin-splitting energies probed by anti-weak-localization analysis in symmetric and asymmetric InGaAs/InAlAs quantum wells

The values of the zero-field spin-splitting energy Δ0 in InAlAs/InGaAs/InAlAs heterostructures are investigated using anti-weak-localization analysis. The obtained values for Δ0 are compared with values that were theoretically predicted assuming Rashba spin–orbit coupling (denoted by ΔR). The good agreement between Δ0 and ΔR and their dependence on quantum well asymmetry suggest that our approach provides a useful tool for designing future spintronics devices using Rashba spin–orbit coupling.